| Resolution
| * 0.8 nm at 15kV in SE mode
* 0.9 nm at 1kV in SE mode
* 1.5 nm at 200V in SE mode
* 0.5 nm at 30 kV in STEM mode |
Horizontal field width (eq. Magnification) |
From 100nm to 1.5mm {Mag~ x25- 1,000,000} |
Landing energy |
50V to 30kV |
Beam current |
1 pA to 22 nA |
Electron source |
Schottky FEG with UC (unicolor) technology
(<0.2eV energy spread - min Cc - chromatic aberration) |
Detection |
* Secondary electron detector (ETD)
* Through-lens SE and BSE detector (TLD)
* High contrast retractable solid state detector (vCD)
* Retractable Annular BF/DF/HAADF STEM detector
* IR camera
* Optical Nav-Cam+ camera for navigation |
Beam decelerator |
Optional stage bias to enhance low-kV performance, especially at ultra-low landing energies |
Scanning |
* 16-bit digital scanning
* Scanning range 512x442 - 4096x3536 pixels
* 25 ns/pixel min dwell time |
Stage |
5 axes high precision and stability piezoceramic stage:
XY: 100mm, Z: max 20 mm, T: -10 ° to +60°, R: 360° continuous |
Vacuum system and anti-contamination accessories |
* Entirely oil-free, includes Edwards XDS10 scroll pump, TMP and IGPs
* Automated Loadlock
* Built-in FEI plasma cleaner
* Special LN2 FEI cryo cleaner |
Chamber |
Large analytical chamber with 21 ports |